Abstract:ABSTRACT Highly reliable thin oxide-nitride-oxide (ONO) stacked dielectrics with oxide-equivalent thickness To;eq h1 the range of 34—68A were fabricated using conventional furnaces and an RTA machine. Rapid Thermal Nitridation(RTN) in NH3 ambient of smooth poly-Si prior to Si3N4 deposition is found to be critical for improving dielectric integrity and low-field leakage current of the ONO stacked dielectrics. This RTN process also significantly improves oxygen diffusion resistance of ultra-thin Si3N4 film. As a result, 22A LPCVD Si3N4 is adequate to sustainwet oxidation at 800°C without any oxygen diffusion through it, which results in a manufaturable and reliableToxeq45A ONO stacked dielectric. By using rugged poly-Si as a bottom electrode plus RTN process, ONO stackeddielectric can be scaled down to about To,ceq34A without any leakage or reliability problems.Keywords: Oxide/Nitride (ON), Oxide/Nitride/Oxide (ONO), Rapid Thermal Nitridation (RTN), LPCVD, DRAM. Th[TRODUCTION The decreased DRAM cell area requires a highly reliable ultra-thin dielectric to ensure a sufficient amount ofstored charge. For high-density DRAM applications, high storage capacitance, low leakage current, high breakdownvoltage, long TDDB lifetime and low infant mortality are key issues to be considered for the storage dielectric.ONO stacked dielectrics have been extensively studied for more than a decade and still remain the most practicalstorage dielectric6. As the ONO stacked dielectric is further scaled down, systematic study on how to manufacturea highly reliable and controllable ultra-thin ONO stacked dielectric continues to be necessary. In this study, 34—68AONO stacked dielectrics were fabricated by simply using the conventional LPCVD Si3N4 furnace, atmosphericoxide furnace as well as an RTA machine. Detailed characterization of the dielectrics includes I-V, C-V, TDDBmeasurements, etc.

Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Scaling Considerations of Interpoly Oxide-Nitride-oxide Dielectric for High-Density DRAM Applications

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

Robust High-Quality Hfn-Hfo2 Gate Stack For Advanced Mos Device Applications

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Scalability And Reliability Of Tan/Hfn/Hfo2 Gate Stacks Fabricated By A High Temperature Process

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs