Abstract:Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled taking into account also the interface state density in a tunnelling relaxation model and it allowed to locate traps within a tunnelling distance up to 1.3nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a Non-Abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiOx matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.

Properties of Interface States at Ta2O5/n-Si Interfaces

Studies of defect states in the interface between SiO2 and a-Si:H films

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Electron States at a Solid Interface

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Effects of Electric Field Annealing on the Interface Diffusion of Cu/Ta/Si Stacks

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

Continuous Distribution of Interface States in N-Type Double-Side Poly-Si/siox Passivating Contact Solar Cells

A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO$_2$

Investigation of SiO<sub>2</sub>-SiC Interface by High-Resolution Transmission Electron Microscope

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Electric Field Accelerating Interface Diffusion in Cu∕Ru∕TaN∕Si Stacks During Annealing

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

The electronic structures of TiO2/Ti4O7, Ta2O5/TaO2 interfaces and the interfacial effects of dopants