Abstract:The $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface in the termination area is a crucial component in limiting high-temperature reverse-bias (HTRB) reliability for $\mathrm{Si}\mathrm{C}$-based high-voltage devices. However, the atomic structure and carrier-trapping behavior of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects therein and the underlying physical mechanisms of breakdown-voltage (${V}_{\mathrm{BD}}$) variation are still largely unclear. Here, the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects of 4H-$\mathrm{Si}\mathrm{C}$ gate turn-off (GTO) thyristors before and after HTRB stress are investigated by transient capacitance measurements and density-functional-theory (DFT) calculations. It is found that the bias stress at 4.4 kV enlarges the interface state density at ${E}_{C}\ensuremath{-}0.60$ eV to ${E}_{C}\ensuremath{-}1.33$ eV by electron capturing. As a result, the negative interface charge is generated. As high-resolution transmission electron microscopy reveals the presence of excess carbon near the $\mathrm{Si}\mathrm{C}$ surface, DFT calculations are focused on carbon-related interface defects to clarify the atomic and electronic structures of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface trap and assign them to negatively charged excess split-interstitial carbon at the interface. Furthermore, technical computer-aided-design simulation further proves that the negatively charged $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defect is the main cause for the observed ${V}_{\mathrm{BD}}$ degradation after the HTRB test, which leads to a strong electric ﬁeld crowding effect. These results not only provide deep physical insights underlying ${V}_{\mathrm{BD}}$ degradation in HTRB-stressed high-voltage devices, but are also of significant importance in the optimizations of device structure and oxidation technology for $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interfaces in high-voltage $\mathrm{Si}\mathrm{C}$ devices.

Investigation of SiO<sub>2</sub>-SiC Interface by High-Resolution Transmission Electron Microscope

Investigation of Sio2-Sic Interface by High-Resolution Transmission Electron Microscope

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Investigation of the SiO2-SiC interface using low energy muon spin rotation spectroscopy

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Structure and energetics of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems revealed by first-principles calculations: Defects in SiC, SiO$_{\rm 2}$, and just at their interface

High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Structure and Stoichiometry of (0001) 4h–sic/oxide Interface

Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface

Effect of Nitrogen Passivation on Interface Composition and Physical Stress in SiO2/SiC(4H) Structures

Atomistic Mechanism of 4 H - Si C / Si O 2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Investigation of SiO&lt;sub&gt;2&lt;/sub&gt;-SiC Interface by High-Resolution Transmission Electron Microscope