Abstract:Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking theoretical results and available experimental evidence, we show that thermal oxidation generates carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Explain the main reasons for the low carrier mobility in the SiC/SiO2 structure**. Specifically, through the combination of theoretical analysis and experimental data, the author explored the influence of carbon di - interstitials \((\text{C}_i)_2\) formed at the SiC/SiO2 interface on carrier mobility. ### Problem Background 1. **Demand for High - Mobility Materials**: High - mobility materials have broad application prospects in microelectronic devices due to their excellent electrical properties. However, in practical applications, the mobility of materials is usually affected by interfaces and contacts. 2. **Success of Si/SiO2 Structure**: For the Si/SiO2 structure, thermal oxidation can form an abrupt interface, and the defects (such as dangling bonds) at the interface can be reduced by hydrogen passivation, so its mobility is relatively high. 3. **Challenges of SiC/SiO2 Structure**: Although SiC has better high - temperature, high - power, and high - field application characteristics than Si, the carrier mobility at the interface formed with SiO2 is much lower than that in pure SiC. Even after optimized treatment, the mobility can only reach 10 - 15% of that in pure SiC. ### Core Problem of the Research The author pointed out that traditional research mainly focuses on reducing or passivating defects in interfaces and oxides, but these methods have not significantly improved the mobility. Therefore, they proposed a new hypothesis: **The carbon di - interstitials \((\text{C}_i)_2\) generated during the SiC thermal oxidation process are the main reasons for the low mobility**. ### Key Findings - **Formation of Carbon Di - Interstitials Defects**: During the thermal oxidation process, a large number of carbon atoms escape in the form of CO or CO2, but some carbon atoms may enter the SiC substrate in the interstitial form and form \((\text{C}_i)_2\) defects. - **Energy Levels of Defects**: Theoretical calculations show that \((\text{C}_i)_2\) defects have multiple energy levels, which can explain the deep - level traps (such as HK0 centers) observed in experiments. - **Experimental Verification**: Through various experimental means (such as DLTS, C - V measurement, etc.), the author found that these defects are consistent with the characteristics of \((\text{C}_i)_2\), and their existence significantly limits the carrier mobility. ### Conclusion The author proposed that reducing or avoiding the formation of \((\text{C}_i)_2\) defects may be the key to improving the carrier mobility in the SiC/SiO2 structure. This conclusion provides new ideas and directions for the future optimization of SiC - based devices.

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