Abstract:In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in lateral implanted 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V−1s−1) than PDA in N2O (20 cm2V−1s−1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. On the other hand, cyclic gate bias stress measurements allowed to separate the contributions of interface states (Nit) both on the upper and bottom parts of the 4H-SiC band gap and near interface oxide traps (NIOTs) in the two oxides. In particular, it was found that NO annealing reduced the total density of charges trapped at the interface states down to 3 × 1011 cm−2 and those trapped inside the oxide down to 1 × 1011 cm−2. Electron energy loss spectroscopy demonstrated that the reduction of these traps in the NO annealed sample is due to the lower amounts of sub-stoichiometric silicon oxide (~1nm) and carbon-related defects (<1nm) at the interface, respectively. This correlation represents a further step in the comprehension of the physics of the SiO2/4H-SiC interface explaining the mobility and threshold voltage behavior of 4H-SiC MOSFETs. Furthermore, the experimental results indicate that an accurate control of SiC re-oxidation during post-deposition annealing in MOSFET technology is a key factor to improve the mobility and threshold voltage stability.

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-Sic/sio2 after High Temperature Oxidation

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

A Highly Efficient Annealing Process with Supercritical N2O at 120 °C for SiO2/4H–SiC Interface

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps

The Effect on the Interface and Reliability of SiC MOS by Ar/O<sub>2</sub> Annealing

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric