Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Reliability Investigation of 4H-Sic MOSFET Based on TCAD Simulation

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

Degradation Of 4h-Sic Mosfets Under Different Short Circuit Test Conditions: A Simulation Study

Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

The Gate Oxide Breakdown Failures of 4H-Sic MOS Devices

Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors

Simulation Study on Single-Event Burnout Reliability of 4H-Sic Trench Gate MOSFET with Combined P-buried Layer

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Analysis of Leakage Current in SiC Power MOSFET Static Avalanche Breakdown Based on Temperature-Dependent Simulation

A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs