Abstract:In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to suppress the total ionizing dose (TID) effect. The new structure settles the radiation-induced leakage current by isolating both the source and drain from the shallow trench isolation (STI) oxides and introducing two auxiliary gates. This work simulates the TID irradiation of three SOI n-MOSFET devices by Sentaurus TCAD and verifies the anti-TID irradiation characteristics of the proposed SGA SOI n-MOSFET. After the novel SGA SOI n-MOSFET was irradiated with 500 krad(Si), the OFF-state leakage current is only marginally increased, the ON-state leakage current is almost unchanged, the threshold voltage drift is 9.423%, and the transconductance degradation is only 7.453%. The simulation results demonstrated the proposed SGA SOI n-MOSFET resisted TID radiation doses up to 500 krad(Si). Meanwhile, the SGA SOI n-MOSFET is much more compact and saves tremendous cost compared with the H-gate-assisted (HGA) SOI n-MOSFET during very large scale integration (VLSI) fabrication and mass production. Moreover, the SGA SOI n-MOSFET solves the disadvantages of the ring-gate-assisted (RGA) SOI n-MOSFET complex aspect ratio ${W}/{L}$ design. The SGA SOI n-MOSFET offers a better alternative for nonultrahigh radiation dose environments.

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A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

The Improvement on Total Ionizing Dose (tid) Effects of the Ultra-Deep Submicron Mosfet Featuring Delta Doping Profiles

Simulation of Threshold Voltage Adjustment by B+ Implantation for Pmos-Radfet Application

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

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Trade-Off Between TID and SEGR Effects Based on High-Voltage Radiation-Hardened Gate Oxide

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Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

The Impact of PTS Doping and Fin Angle on TID Response of 14-Nm Bulk FinFETs

Threshold Voltage Adjustment of Pmos-Radiation Field-Effect Transistor with Thick Thermal Oxide