Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

Elevated Metal Metal-Oxide Thin-Film Transistor — A New Bottom-Gate Transistor Architecture for Flat-Panel Displays

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Sub-Micron Oxide TFT for the Era of Oxide-Based Display

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs with Al Reacted Source/Drain

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island

Flexible Self-Aligned Double-Gate IGZO TFT

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

5-Inch Amoled Driven By High Stability In-Zn-Oxide Thin-Film Transistors

Technology Issues for Self-aligned Top-Gate Amorphous Metal Oxide Thin-Film Transistors

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$\hbox{SiO}_{2}$ Electrolyte Dielectrics

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathways

8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology