Abstract:Amorphous metal-oxide semiconductors (AOSs) such as indium-gallium-zinc-oxide (IGZO) as an active channel have attracted substantial interests with regard to high-performance thin-film transistors (TFTs). Recently, intensive and extensive studies of flexible and/or wearable AOS-based TFTs fabricated by solution-process have been reported for emerging approaches based on device configuration and fabrication process. However, several challenges pertaining to practical and effective solution-process technologies remain to be resolved before low-power consuming AOS-based TFTs for wearable electronics can be realized. In this paper, we investigate the non-thermal annealing processes for sol-gel based metal-oxide semiconductor and dielectric films fabricated by deep ultraviolet (DUV) photo and microwave annealing at low temperature, compared to the conventional thermal annealing at high temperature. A comprehensive investigation including a comparative analysis of the effects of DUV photo and microwave annealing on the degree of metal-oxide-metal networks in amorphous IGZO and high-dielectric-constant (high-k) aluminum oxide (Al2O3) films and device performance of IGZO-TFTs in a comparison with conventional thermal annealing at 400 °C was conducted. We also demonstrate the feasibility of wearable IGZO-TFTs with Al2O3 dielectrics on solution-processed polyimide films exhibiting a high on/off current ratio of 5 × 104 and field effect mobility up to 1.5 cm2/V-s operating at 1 V. In order to reduce the health risk and power consumption during the operation of wearable electronics, the operating voltage of IGZO-TFTs fabricated by non-thermal annealing at low temperature was set below ~1 V. The mechanical stability of wearable IGZO-TFTs fabricated by an all-solution-process except metal electrodes, against cyclic bending tests with diverse radius of curvatures in real-time was investigated. Highly stable and robust flexible IGZO-TFTs without passivation films were achieved even under continuous flexing with a curvature radius of 12 mm.

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Thermal Radiation Annealing for Overcoming Processing Temperature Limitation of Flexible Perovskite Solar Cells

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors

High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing

High‐performance Nd: AIZO/Al2O3 dual active layer design without thermal annealing: high‐speed electron transport and defect modification in thin film transistors

Low-Temperature Fabrication of Indium Oxynitride Thin-Film Transistors via Plasma-Assisted Solution Process

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor

Rapid Laser Annealing of Silver Electrodes for Printing Organic Thin-Film Transistors on Plastic Substrates

Bendable metal oxide thin-film transistors and circuits for analog electronics applications