Abstract:Solution processed metal oxide thin-film transistors (MO-TFTs) have gained momentum in recent years and opened new horizons for their extended applications in thin-film optoelectronics. Unfortunately, the relatively high processing temperature has become the main limitation for their commercial application in flexible electronics. In this work, ultrashort femtosecond (fs) laser pulses were used for the annealing of printed InGaZnO TFT arrays with low temperature and fast processing. The high transient intensity and negligible heat-affected zone is beneficial to the effective conversion of precursor to metal-oxide lattices, which was also verified by the x-ray photoelectron spectroscopy analysis. Moreover, for the first time, based on optical engineering method, dielectric mirrors (DMs) is proposed to realize reflection of photon irradiation and protect the underlying polymer substrate. TFTs on polyethylene naphthalate (PEN) substrate with polymer insulator exhibited a mobility of 4.24 cm2 V−1 s−1, along with good mechanical stability. The mechanism of DMs for the improvement of the device performance was systematically investigated based on laser-matter interaction, optical structure and photon transport. DMs can reduce laser-induced pressure and variation of dielectric properties in PEN substrate resulting from the impact ionization due to a strong nonlinear multi-photon absorption. Our work clearly demonstrated that flexible MO-TFTs can be simply fabricated with fs-laser annealing. More importantly, this novel method is applicable for a wide range of MO and polymer substrates, by solving the incompatibility of solution processed MO and polymer substrates due to high processing temperature. Therefore, the proposed method showed tremendous potential to be applicable in flexible electronics such as sensors, display and circuits.

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Low-temperature and high-performance ZnSnO thin film transistor activated by lightwave irradiation

Laser Annealing of Metal Oxide Thin Film Transistor

Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

Excimer laser annealing of ZnO nanoparticles for thin film transistor fabrication

Microwave Annealing As a Low Thermal Budget Technique for ZnO Thin-Film Transistors Fabricated Using Atomic Layer Deposition