Abstract:Solution processed metal oxide thin-film transistors (MO-TFTs) have gained momentum in recent years and opened new horizons for their extended applications in thin-film optoelectronics. Unfortunately, the relatively high processing temperature has become the main limitation for their commercial application in flexible electronics. In this work, ultrashort femtosecond (fs) laser pulses were used for the annealing of printed InGaZnO TFT arrays with low temperature and fast processing. The high transient intensity and negligible heat-affected zone is beneficial to the effective conversion of precursor to metal-oxide lattices, which was also verified by the x-ray photoelectron spectroscopy analysis. Moreover, for the first time, based on optical engineering method, dielectric mirrors (DMs) is proposed to realize reflection of photon irradiation and protect the underlying polymer substrate. TFTs on polyethylene naphthalate (PEN) substrate with polymer insulator exhibited a mobility of 4.24 cm2 V−1 s−1, along with good mechanical stability. The mechanism of DMs for the improvement of the device performance was systematically investigated based on laser-matter interaction, optical structure and photon transport. DMs can reduce laser-induced pressure and variation of dielectric properties in PEN substrate resulting from the impact ionization due to a strong nonlinear multi-photon absorption. Our work clearly demonstrated that flexible MO-TFTs can be simply fabricated with fs-laser annealing. More importantly, this novel method is applicable for a wide range of MO and polymer substrates, by solving the incompatibility of solution processed MO and polymer substrates due to high processing temperature. Therefore, the proposed method showed tremendous potential to be applicable in flexible electronics such as sensors, display and circuits.

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor

Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Eliminating Leakage Current in Thin‐Film Transistor of Solution‐Processed Organic Material Stack for Large‐Scale Low‐Power Integration

Full-solution-processed High Mobility Zinc-Tin-oxide Thin-Film-transistors

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Optimized Optical Design of Thin-Film Transistor Arrays for High Transmittance and Excellent Chromaticity

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels