Abstract:Solution processed metal oxide thin-film transistors (MO-TFTs) have gained momentum in recent years and opened new horizons for their extended applications in thin-film optoelectronics. Unfortunately, the relatively high processing temperature has become the main limitation for their commercial application in flexible electronics. In this work, ultrashort femtosecond (fs) laser pulses were used for the annealing of printed InGaZnO TFT arrays with low temperature and fast processing. The high transient intensity and negligible heat-affected zone is beneficial to the effective conversion of precursor to metal-oxide lattices, which was also verified by the x-ray photoelectron spectroscopy analysis. Moreover, for the first time, based on optical engineering method, dielectric mirrors (DMs) is proposed to realize reflection of photon irradiation and protect the underlying polymer substrate. TFTs on polyethylene naphthalate (PEN) substrate with polymer insulator exhibited a mobility of 4.24 cm2 V−1 s−1, along with good mechanical stability. The mechanism of DMs for the improvement of the device performance was systematically investigated based on laser-matter interaction, optical structure and photon transport. DMs can reduce laser-induced pressure and variation of dielectric properties in PEN substrate resulting from the impact ionization due to a strong nonlinear multi-photon absorption. Our work clearly demonstrated that flexible MO-TFTs can be simply fabricated with fs-laser annealing. More importantly, this novel method is applicable for a wide range of MO and polymer substrates, by solving the incompatibility of solution processed MO and polymer substrates due to high processing temperature. Therefore, the proposed method showed tremendous potential to be applicable in flexible electronics such as sensors, display and circuits.

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

High Performance RF Sputtering Deposited AZO Thin-Film Transistors after a Post-Annealing Process

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate

Performance Improvement of Oxide Thin-Film Transistors with a Two-Step-annealing Method

High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors