Abstract:Abstract In this study, an Ar/O 2 plasma mixture treatment with different proportions of O 2 was used to reduce the oxygen vacancy density in an amorphous indium gallium zinc oxide (a-IGZO) thin film. The objective was to enhance the field-effect carrier mobility in a thin-film transistor (TFT) with the IGZO film as the channel layer. Atomic force microscopy revealed that the roughness of the IGZO film after plasma treatment was higher than that of the untreated film; however, the surface roughness of the IGZO film decreased after the proportion of O 2 was increased in the plasma. The Hall measurement results showed that the resistivity of the plasma-treated IGZO film increased with a decrease in the electron concentration in the film; in addition, the carrier mobility considerably increased. The IGZO TFT fabricated from this film exhibited a high field-effect carrier mobility of 36 cm 2 V −1 s −1 , a subthreshold swing (SS) of 1.25 V/decade, an I OFF current of 4.58 × 10 −11 A, and an I ON / I OFF current ratio of 7.55 × 10 5 . To further improve the device performance, the plasma-treated IGZO films were subjected to thermal annealing with the annealing temperature ranging from 100 °C to 300 °C. After the annealing process, the plasma-treated IGZO TFTs demonstrated a further improvement in the device performance with a field-effect carrier mobility of 38.8 cm 2 V −1 s −1 , SS of 0.7 V/decade, I OFF current of 1.04 × 10 −11 A, and an I ON / I OFF current ratio of 9.93 × 10 6 . In addition, a reliability test was performed to evaluate the stability of the IGZO TFT devices, which revealed that the threshold voltage maintained a high degree of stability during the long-term tests. Therefore, the plasma-treated IGZO TFTs with subsequent postgrowth annealing could be helpful for the fabrication of next-generation flat-panel displays.

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing

Performance Improvements of Igzo and Zno Thin-Film Transistors by Laser-Irradiation Treatment

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing