Abstract:Indium oxide (In 2 O 3 ) thin films and thin-film transistors (TFTs) based on the solution process were prepared by pulsed UV-assisted thermal annealing at a low temperature of 200 for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In 2 O 3 thin films were investigated in comparison with conventional thermal annealing (300, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In 2 O 3 thin films and the performance of TFTs in a short period. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) results show that the surface of the In 2 O 3 films is denser and flatter than that of the conventional thermally annealed films, and X-ray photoelectron spectroscopy (XPS) tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In 2 O 3 films. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In 2 O 3 TFTs was comparatively investigated. The results showed that the electrical characteristics of the devices are significantly improved, with the subthreshold swing reduced to 0.12 mV·dec -1 , the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×10 7 , and the field effect mobility is enhanced to 1.27 cm 2 ·V -1 s -1 . Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performance of In 2 O 3 thin films and TFTs, even under low-temperature conditions.

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Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors

Solution-processed IGZO field-effect transistors with a three-step laser annealing process

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Low-Temperature Rapid Preparation of High-Performance Indium Oxide Thin Films and Transistors Based on Solution Process

High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Fabrication of High-Performance A-Igzo Thin-Film Transistor with Post-Annealing Treatment

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate

Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array

Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film Transistor

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing