Abstract:The challenges associated with low-temperature solution-processed metal oxide thin-film transistors (TFTs) have hindered the realization of flexible oxide electronics at temperatures lower than 200 degrees C. NH3 plasma treatment is embarked upon as a route to effectively transform the chemical precursors to semiconducting metal oxides with high electrical quality. NH 3 plasma-activated indium oxide (InOx) TFTs with saturated mobility 2.48 cm(2)V(-1)s(-1) have been obtained at temperature as low as 150 degrees C. The low-temperature activation mechanism of NH3 plasma treatment for InOx films and the role of post-annealing in the fabrication process of InOx TFTs have been explored. Research shows that NH3 plasma treatment activates InOx films based on plasma bombardment, radicals doping and radical reactions; then, unreacted radicals and interstitial radicals were effectively removed by extra thermal energy from post-annealing. In comparison to thermal annealing, NH3 plasma treatment with moderate post-annealing is capable of achieving high degrees of condensation and densification reactions for InOx film and modulating the carrier concentration in a manner suitable for high-performance semiconducting behavior with low thermal budget. However, The InOx film after NH3 plasma treatment exhibited a non-uniform geometry due to the effect of plasma-induced damage in the local regions of InOx film, which restricts its commercial application. Some strategies were reported to eliminate the effect of plasma-induced damage by changing plasma conditions or pre-annealing temperature. The results demonstrated that changing plasma conditions by decreasing the plasma chamber temperature or the plasma power can eliminate plasma-induced damage, but attenuate the electrical performance of InOx TFT; nevertheless, changing pre-annealing temperature to 30 degrees C not only effectively eliminate plasma-induced damage, but also further improve the electrical performances of InOx TFT. These results provide a way for fabricating low-temperature oxide circuitry and supply an effective idea for avoiding plasma-induced damage. (C) 2019 Elsevier B.V. All rights reserved.

Low-Temperature Fabrication of Indium Oxynitride Thin-Film Transistors via Plasma-Assisted Solution Process

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Impact of NH3 Plasma Treatment for Solution-Processed Indium Oxide Thin-Film Transistors with Low Thermal Budget

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Low-temperature fabrication of high performance indium oxide thin film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Analysis of the Annealing Budget of Metal Oxide Thin-Film Transistors Prepared by an Aqueous Blade-Coating Process

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

Low-Temperature Rapid Preparation of High-Performance Indium Oxide Thin Films and Transistors Based on Solution Process

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Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Improvement of PrIZO Thin Films by O$_{\text{2}}$ Plasma Treatment Combined With Low-Temperature Annealing for Thin-Film Transistors

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

UV Irradiation Assisted Low-Temperature Process for Thin Film Transistor Performance Improvement of Praseodymium-Doped Indium Zinc Oxide

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Solution-processed High-Mobility Neodymium-Substituted Indium Oxide Thin-Film Transistors Formed by Facile Patterning Based on Aqueous Precursors

Enhancement on the Performance of Eco-Friendly Solution-Processed InO/AlO Thin-Film Transistors Via Lithium Incorporation