Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

35.3: Self‐formed Nano‐scale Metal‐oxide Contact Interlayer for Amorphous Silicon Tin Oxide TFTs

A Study of Contact Properties Between Molybdenum and Amorphous Silicon Tin Oxide Thin Film Transistors

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate.

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor with Source/Drain Regions Doped by Al Reaction

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Anodization-Induced ZrOx/AlOx Stacked Films for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors

Self-aligned Top-Gate Amorphous Oxide Thin-Film Transistors with IZO/IGZO Stacked Active Layer and Al Reacted Source/drain Region

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Enhanced Organic Thin-Film Transistor Stability by Preventing MoO 3 Diffusion with Metal/MoO 3 /Organic Multilayered Interface Source-Drain Contact

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process