Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

35.3: Self‐formed Nano‐scale Metal‐oxide Contact Interlayer for Amorphous Silicon Tin Oxide TFTs

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

A Study of Contact Properties Between Molybdenum and Amorphous Silicon Tin Oxide Thin Film Transistors

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors

Enhanced Organic Thin-Film Transistor Stability by Preventing MoO 3 Diffusion with Metal/MoO 3 /Organic Multilayered Interface Source-Drain Contact

Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate.

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Amorphous InGaZnO Thin Film Transistors with Sputtered Silver Source/drain and Gate Electrodes

Influence of Source and Drain Contacts on the Properties of Indium-Gallium Zinc-Oxide Thin-Film Transistors Based on Amorphous Carbon Nanofilm As Barrier Layer

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Improved Performance of the Amorphous Indium-Gallium-zinc Oxide Thin Film Transistor with Cu-Mo Source/drain Electrode

Flexible Thin‐film Transistors Application of Amorphous Tin Oxide‐based Semiconductors

Anodization-Induced ZrOx/AlOx Stacked Films for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

Influence of Source and Drain Contacts on the Properties of the Indium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide Gate Dielectrics

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.