Abstract:A design concept of carrier transport/relaxation bilayer amorphous‐oxide‐semiconductor TFTs is demonstrated to avoid the bucket effect inevitable in single‐layer devices. In&Sn‐rich InSnZnO/InSnZnO:Pr bilayer TFTs that combine high mobility (75.5 cm2 V−1 s−1), robust normalized drain current (225 μA), and satisfactory NBIS/PBTS stability (voltage shift ∼ −1.64/0.76 V) are successfully developed. Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.

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Oxygen‐Induced Lattice Strain for High‐Performance Organic Transistors with Enhanced Stability

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Hybrid Organic-Metal Oxide Multilayer Channel Transistors with Record Operational Stability

Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

Balancing the film strain of organic semiconductors for ultrastable organic transistors with a five-year lifetime

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High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (adv. Funct. Mater. 25/2016)

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