Abstract:Thin film transistors based on a‐IGZO/a‐ITZO/a‐IGZO heterostructural channel are fabricated. The TFTs exhibited outstanding electrical performances, with field effect mobility exceeding 50 cm2V‐1s‐1, ideally small positive/negative‐bias‐stress voltage shifts down to 0.1/0.004 V, and optimized sub‐threshold swing as low as 80 mV dec−1. Improvements in the quality of transport interface verified by magnetotransport and Hall effect account for enhanced transport performances and device reliabilities. Thin film transistors (TFTs) based on amorphous oxide semiconductors (AOS) are promising candidates for panel displays. However, the trade‐off between mobility and reliability in AOS‐TFTs hinders their further applications in next‐generation display techniques and newly developed logic and memory circuits. Here, a structural strategy is proposed for the mobility‐reliability trade‐off, via a triple‐layer channel containing a Ga‐free high‐mobility layer (amorphous InSnZnO, a‐ITZO) sandwiched by two Ga‐rich layers (amorphous InGaZnO, a‐IGZO) with higher reliability. Gate‐induced carrier accumulation is verified mainly being energetically confined within the high mobility a‐ITZO layer, at the newly defined a‐ITZO/a‐IGZO interface. Compared to single layer a‐ITZO‐TFTs, triple‐channel a‐IGZO/a‐ITZO/a‐IGZO TFTs (GTG‐TFTs) exhibit outstanding stability and electrical transport performances, with suppressed positive/negative‐bias‐stress voltage shifts from 1/0.3 to 0.1/0.004 V, enhanced field effect mobility from ≈40 to 56 cm2V−1s−1, and optimized sub‐threshold swing down to 80 mV dec−1. Further numerical simulations and charge transport characterizations, including magnetotransport and gate‐induced Hall effect, indicate that charge transport in tri‐layer structure is less affected by energetic disorders present at gate insulator interfaces.

Structure Optimization on Elevated-Metal A-Ingazno Thin Film Transistors

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Optimization of the ZTO/GI interface of Bottom-gate Amorphous ZnSnO Thin-Film Transistor

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

P‐15: the Use of Fluorination to Enhance the Performance and the Reliability of Elevated‐Metal Metal‐Oxide Thin‐Film Transistors

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Indium–Gallium–Zinc–Oxide Thin-Film Transistors Based on Homojunctioned Structure Fabricated with a Self-Aligned Process