Abstract:In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including channel thickness ( $\textit{T}_{\text{ch}}\text{)}$ down to 1.5 nm and channel length ( $\textit{L}_{\text{ch}}\text{)}$ down to 60 nm. These IGZO channels with a high In atomic ratio of 92% were derived by atomic-layer-deposition (ALD), where the IGZO thickness could be precisely controlled by ALD cycles. These TFTs were subjected to a mild O $_{\text{2}}$ annealing at 250 $^{\circ}$ C, the effect of which is also systematically investigated. It is found that both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing have significant effects on TFT performance. By using optimized O $_{\text{2}}$ annealing conditions, the ALD IGZO TFTs with scaled $\textit{T}_{\text{ch}}$ of 1.5 nm and $\textit{L}_{\text{ch}}$ of 60 nm exhibit desirable electrical performance including a high ON/OFF ratio ( $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}\text{)}$ $\sim$ 10 $^{\text{11}}$ , a decent high Ion of 354 $\mu$ A/ $\mu$ m under $\textit{V}_{\text{DS}}$ of 1.2 V, a steep subthreshold swing (SS) of 68 mV/dec, a small drain-induced-barrier-lowering (DIBL) of 30 mV/V, and a normal-off operation, which is comparable to the state-of-art sputtered IGZO TFTs. Furthermore, the optimized TFTs also exhibit significantly resolved threshold voltage ( $\textit{V}_{\text{T}}\text{)}$ roll-off and a remarkably high degree of stability to the positive gate bias stress (PBS). A trap model with its possible microscopic origin is proposed, which explains well the dependence of electrical performance on both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing, thus providing a new insight into the reliability of IGZO TFTs.

Cluster Size Control Toward High Performance Solution Processed InGaZnO Thin Film Transistors

Process development of inverted‐staggered amorphous InGaZnO thin‐film transistors with wet‐etched electrodes

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

Solution-processed zinc oxide thin films and top-gate thin film transistors

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Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

A Simple Method For High-Performance, Solution-Processed, Amorphous Zro2 Gate Insulator Tft With A High Concentration Precursor

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

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Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches