Abstract:Magnesium (Mg)-induced metallization of amorphous indium-gallium-zinc-oxide (a-IGZO) films is investigated to develop a self-aligned (SA) top-gate (SATG) a-IGZO thin-film transistor (TFT) technology. The high-conductive and SA a-IGZO source/drain (S/D) regions are well realized by a short time of sputtered deposition of Mg onto the a-IGZO film on a heated substrate, followed by the removal of the spare Mg on the surface in hot water. It is shown that the resistivity of the a-IGZO films is lowered to about <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4 \times 10^{-{3}}\,\,\Omega $ </tex-math></inline-formula> cm from over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}~\Omega $ </tex-math></inline-formula> cm with a 36-s Mg deposition at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$300~^{\circ }\text{C}$ </tex-math></inline-formula> . The metallization effect is believed to be the consequence of a large number of donor-like defects (oxygen vacancies) generated by oxidation–reduction reaction at the interface between the Mg and a-IGZO films. The SATG a-IGZO TFTs fabricated by the proposed technology show excellent electrical characteristics, such as a field-effect mobility of 19.5 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ </tex-math></inline-formula> , a subthreshold swing of 0.19 V/dec, an ON-/ OFF-current ratio of over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{9}}$ </tex-math></inline-formula> , a low S/D series resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.1~\Omega $ </tex-math></inline-formula> cm, a small channel length shrinking of around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.1~\mu \text{m}$ </tex-math></inline-formula> , and a high stability against electrical stresses.

Effect of Monoethanolamine Stabilizer on the Solution-Processed InGaZnO Thin-film Transistors

Cluster Size Control Toward High Performance Solution Processed InGaZnO Thin Film Transistors

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors

Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

Amorphous InGaZnO Thin Film Transistors with Wet-Etched Ag Electrodes

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Effects of Solvent Treatment on the Characteristics of Ingazno Thin-Film Transistors

Influence of Oxygen Plasma Treatment on the Amorphous IGZO Thin Film Transistors

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method