P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

Sarah Bebiche,Sisi Wang,Lu Lei,Man Wong,Hoi-Sing Kwok

DOI: https://doi.org/10.1002/sdtp.12314

2018-01-01

Abstract:Flexible EMMO IGZO TFTs fabricated on 20 µm thick PI film are reported here. The utilized technology results in high electrical stability, of devices, combined to high robustness against mechanical deformation down to 3%.

What problem does this paper attempt to address?

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Chih-Wei Chien,Cheng-Han Wu,Yu-Tang Tsai,Yen-Cheng Kung,Chang-Yu Lin,Po-Ching Hsu,Hsing-Hung Hsieh,Chung-Chih Wu,Yung-Hui Yeh,Chyi-Ming Leu,Tzong-Ming Lee

DOI: https://doi.org/10.1109/ted.2011.2109041

IF: 3.1

2011-05-01

IEEE Transactions on Electron Devices

Abstract:We demonstrated flexible amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) on fully transparent and high-temperature polyimide-based nanocomposite substrates. The flexible nanocomposite substrates were coated on the carrier glass substrates and were debonded after the TFT microfabrication. The adoption of the Ti/IZO stacked electrodes as source/drain/gain electrodes significantly improved the etching compatibility with other material layers, enabling successful implementation of flexible a-IGZO TFTs onto the transparent nanocomposite substrates by conventional lithographic and etching processes. The flexible a-IGZO TFTs exhibited decent mobility and mechanical bending capability. Field-effect mobility of up to 15.9 $\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$, a subthreshold swing of 0.4 V/dec, a threshold voltage of 0.8 V, and an on/off ratio of $>\hbox{10}^{8}$ were extracted from the TFT characteristics. The devices could be bent down to a radius of curvature of 3 mm and yet remained normally functional. Such successful demonstration of flexible oxide TFTs on transparent flexible substrates using fully lithographic and etching processes that are compatible with existing TFT fabrication technologies shall broaden their uses in flexible displays and electronics.

engineering, electrical & electronic,physics, applied
Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED

Zhiping Xu,Min Li,Miao Xu,Jianhua Zou,Zhuo Gao,Jiawei Pang,Ying Guo,Lei Zhou,Chunfu Wang,Dong Fu,Junbiao Peng,Lei Wang,Yong Cao

DOI: https://doi.org/10.1117/12.2071794

2014-01-01

Abstract:We report a flexible amorphous Lanthanide doped In-Zn-O (IZO) thin-film transistor (TFT) backplane on polyimide (PI) substrate. In order to de-bond the PI film from the glass carrier easily after the flexible AMOLED process, a special inorganic film is deposited on the glass before the PI film is coated. The TFT exhibited a field-effect mobility of 6.97 cm(2)V(-1) s(-1), a subthreshold swing of 0.248 V dec(-1), and an I-on/I-off ratio of 5.19x10(7), which is sufficient to drive the OLEDs.
Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

hua xu,jiawei pang,miao xu,min li,ying guo,zikai chen,jianhua zou,hong tao,lei wang,junbiao peng

DOI: https://doi.org/10.1149/2.007409jss

IF: 2.2

2014-01-01

ECS Journal of Solid State Science and Technology

Abstract:We have fabricated flexible amorphous Indium-Gallium-Zinc-oxide (IGZO) thin-film transistors (TFTs) with back-channel-etch structure by a chemical vapor deposition-free process. All the processes are performed well below 160 degrees C on a polyethylene napthalate (PEN) substrate with anodic aluminum oxide as gate dielectric, which can be highly immune to the strain failure. The IGZO-TFTs show field-effect mobility of 11.2 cm(2)/V s, subthreshold swing (SS) of 0.27 V/decade, low off-state current similar to 10 fA, low leakage current <1 pA and high I-ON/I-OFF ratio of 10(9). Meanwhile, the performance of flexible IGZO-TFTs do not deteriorate during the bending with the curvature radius as 10 mm. Using a PEN as substrate, flexible active-matrix organic light-emitting diode (AMOLED) displays driven by the IGZO-TFTs have been demonstrated. (c) 2014 The Electrochemical Society. All rights reserved.
Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Qiuwei Shi,Izzat Aziz,Jin-Hao Ciou,Jiangxin Wang,Dace Gao,Jiaqing Xiong,Pooi See Lee

DOI: https://doi.org/10.1007/s40820-022-00929-y

2022-09-28

Abstract:Highlights A stable laminated Al 2 O 3 /HfO 2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al 2 O 3 /HfO 2 insulator. The flexible TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 . Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al 2 O 3 /HfO 2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In 0.37 Ga 0.20 Zn 0.18 O 0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al 2 O 3 /HfO 2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al 2 O 3 , crystallized HfO 2 , and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 , signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
24‐4: Flexible AMOLED Based on Oxide TFT with High Mobility

Lei Wang,Chongpeng Ruan,Hua Xu,Min Le,Jianhua Zou,Hong Tao,Lei Zhou,Jiawei Pang,Linfeng Lan,Honglong Ning,Weijing Wu,Rihui Yao,Miao Xu,Junbiao Peng

DOI: https://doi.org/10.1002/sdtp.11604

2017-01-01

SID Symposium Digest of Technical Papers

Abstract:We report a high performance foldable and rollable AMOLED display with 300 ppi (real RGB) driven by oxide thin film transistors (TFTs) based on a polyimide (PI) substrate. No new defects appear on the display after 100,000 times bending with radius of curvature at 3 mm. In the oxide TFT, the Lanthanide rare earth doped In‐Zn‐O (LnIZO) is employed as the key active layer to improve the mobility and stability. The fabricated Ln‐IZO TFT with BCE process exhibits a high field‐effect mobility of ~40 cm2V‐1s‐1, a subthreshold swing of 0.13 V/decade, and an Ion/Ioffratio of 109. Meanwhile, laminated Al2O3/MgO film prepared by the method of atomic layer deposition (ALD) is used as the encapsulation of AMOLED display.
Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Yan Wang,Yingjie Tang,Yitong Chen,Dingwei Li,Huihui Ren,Guolei Liu,Fanfan Li,Ran Jin,Bowen Zhu

DOI: https://doi.org/10.1088/2058-8585/acee93

IF: 3.1

2023-08-11

Flexible and Printed Electronics

Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

materials science, multidisciplinary
47-4:Invited Paper: Flexible AMOLED Based on Oxide TFT with High Mobility

Hua Xu,Min Li,Lei Wang,Miao Xu,Honglong Ning,Junbiao Peng

DOI: https://doi.org/10.1002/sdtp.10752

2016-01-01

Abstract:We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) based on a polyimide (PI) substrate. In the oxide TFT, a triple-stacked structure of active layer is employed to improve the mobility and stability. The fabricated TFT exhibit a high field-effect mobility of 38.8 cm2 V−1 s−1, a subthreshold swing of 0.15 V/dec, and an Ion/Ioff ratio of 109. Meanwhile, Al2O3 film prepared by the method of atomic layer deposition (ALD) is used as the encapsulation of AMOLED display, which demonstrating a superior water vapor transmission rate (WVTR) as low as 5.43×10−5 g/m2/day estimated by Calcium (Ca) corrosion method at 40 °C/100%.
Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Chang-Yu Lin,Chih-Wei Chien,Cheng-Han Wu,Hsing-Hung Hsieh,Chung-Chih Wu,Yung-Hui Yeh,Chun-Cheng Cheng,Chih-Ming Lai,Ming-Jiue Yu,Chyi-Ming Leu,Tzong-Ming Lee

DOI: https://doi.org/10.1149/05006.0293ecst

2013-03-15

ECS Transactions

Abstract:We report successful implementation of top-gate staggered a-IGZO TFTs with decent performance and environmental stability by adopting the SiOx/SiNx bi-layer gate-insulator stack. We successfully integrated the top-gate staggered a-IGZO TFTs into a working 2.2-inch AMOLED display panel, demonstrating the real use of the developed TFTs. We had also successfully implemented flexible top-gate staggered a-IGZO TFTs on colorless and transparent polyimide-based nanocomposite substrates using fully lithographic and etching processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility>10 cm2/V⋅s) either as fabricated or as de-bonded from the carrier glass. By bending the devices to different radii of curvature, influences of mechanical strains on characteristics of the flexible a-IGZO TFTs were also investigated.
Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Chang-Yu Lin,Kechao Tang,Chyi-Ming Leu,Yung-Hui Yeh

DOI: https://doi.org/10.1007/s00542-019-04707-6

2019-01-01

Microsystem Technologies

Abstract:Amorphous In2O3–Ga2O3–ZnO (a-IGZO) thin-film-transistors (TFTs) have attracted increasing attention in recent years due to their potential on flexible electronics applications. We investigated low-temperature-processed a-IGZO TFTs and inverters on transparent polyimide. We had successfully implemented flexible top-gate staggered a-IGZO TFTs and inverter circuits on transparent polyimide-based nanocomposite substrates using fully lithographic, etching and PECVD processes that are compatible with existing TFT mass fabrication technologies. The TFTs showed decent performances (with mobility > 20 cm2/V s) as de-bonded from the carrier glass. Furthermore, the IGZO-based inverter also showed decent performances (voltage gain > 1.5) and is considered as a potential pathway toward flexible electronics.
P‐11: Development of Easy‐debonding IGZO TFT Array on Flexible PI Substrate at Low Temperature

Xi‐Feng Li,Le‐Yong Zhu,Long‐Long Chen,Ji‐Feng Shi,Xiang Sun,Jian‐Hua Zhang,En‐Long Xin,Cheng‐Chung Chen,Hao‐Chun Zang,Si‐Tao Huo,Zhi‐Hua Ling,Jun Ma

DOI: https://doi.org/10.1002/j.2168-0159.2014.tb00255.x

2014-01-01

SID Symposium Digest of Technical Papers

Abstract:AbstractActive Matrix displays on light weight, non‐fragile, plastic substrates are of great interests for portable applications. One of the challenges has been device performance processed at low temperature: in both carrier mobility and operation stability. Another challenge has been bonding‐debonding efficiency. IGZO TFT array was fabricated on a lamination‐based polyimide (PI) flexible substrate at 200°C and is easily debonded without additional equipment. Good electrical characteristic and high stability of the IGZO TFT have been demonstrated.
81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

Hasnat Rabbi,Jinbaek Bae,Taebin Lim,Koji Yamaguchi,Daichi Sasaki,Emi Kawashima,Yuki Tsuruma,Jin Jang,Md. Hasnat Rabbi

DOI: https://doi.org/10.1002/sdtp.16776

2023-06-01

SID Symposium Digest of Technical Papers

Abstract:We demonstrate high‐performance, coplanar polycrystalline InGaO (poly‐IGO) thin film transistors (TFTs) on polyimide (PI) substrate. The TFTs exhibit the saturation mobility (μSAT) of >45 cm 2 V -1 s -1 and very stable bias stress stabilities of negligible ΔVTH of +0.2 V and +0.1 V under PBTS and NBTS, respectively. A gate driver on the PI substrate is working well with a very low rising and falling time of less than 0.62 μs. Therefore, the flexible poly‐IGO TFTs could be used for high‐resolution foldable AMOLED display backplanes.
Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Yogeenth Kumaresan,Yusin Pak,Namsoo Lim,Yonghun kim,Min-Ji Park,Sung-Min Yoon,Hyoc-Min Youn,Heon Lee,Byoung Hun Lee,Gun Young Jung

DOI: https://doi.org/10.1038/srep37764

IF: 4.6

2016-11-23

Scientific Reports

Abstract:Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

multidisciplinary sciences
High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Mengfei Wang,Xuefei Li,Xiong,Jian Song,Chengru Gu,Dan Zhan,Qianlan Hu,Shengman Li,Yanqing Wu

DOI: https://doi.org/10.1109/led.2019.2895864

IF: 4.8157

2019-01-01

IEEE Electron Device Letters

Abstract:Flexible zinc oxide thin film transistors (ZnO TFTs) with a mobility of $ {13}~\text {cm}^{2}/\text {V}\cdot \text {s}$ and an I $_{\text {on}}/\text{I}_{\text {off}}$ ratio of $ {1.5}\times {10}^{8}$ have been fabricated on polyimide substrate, where the ZnO channel is deposited by atomic layer deposition (ALD) at 140 °C. High bending stability has been achieved due to excellent interface quality between alumina (Al2O3) dielectric and ZnO channel with a sharp interface topography. The flexible ZnO device exhibits excellent electrical characteristics even after being bent for 200 000 cycles with a tensile strain of 0.63%. Electrical measurement under a high tensile strain of 2.08% has also been carried out. Moreover, the electrical performance dependence of flexible ZnO TFTs with a tensile strain of 0.78% on temperature from 20 °C to 140 °C has been investigated for the first time.
Flexible Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Aluminum Oxide Gate Insulator on Polyimide Substrate By Spray Pyrolysis for Foldable Display

Jinbaek Bae,Jin Jang

DOI: https://doi.org/10.1149/ma2022-02351288mtgabs

2022-11-24

ECS Meeting Abstracts

Abstract:Research interest in thin-film transistor (TFT)-based flexible electronics for next-generation foldable and rollable displays is increasing, centering on flexible plastic substrates such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). For flexible electronics using plastic substrates, it is important to select suitable semiconductor materials that can be deposited at low substrate temperature. Metal oxide (MO) semiconductors such as indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO) are attracting attention as suitable candidates for plastic substrate electronics because of their higher mobility and optical transmittance than hydrogenated amorphous silicon (a-Si:H). In addition, since it can be processed at a lower temperature than low-temperature polysilicon (LTPS), it can be easily applied to flexible plastic substrates. One of the greatest advantages of MO is that it can be easily fabricated by conventional semiconductor processing methods such as sputtering, atomic laser deposition, and solution processes. Among them, solution-processed deposition method is particularly advantageous in terms of manufacturing efficiency because it does not require a separate vacuum system, and can efficiently utilize raw materials, so the fabrication cost is inexpensive. In particular, spray pyrolysis can guarantee environmental stability, high mobility, and large area production than other solution processes. In this work, we developed the high-performance, flexible a-IGZO/Al 2 O 3 TFTs using spray pyrolysis fabricated on the flexible PI substrate. In a previous study, we developed a method to reduce curling and electrostatic discharge (ESD) damage to PI substrates by using a mixture of carbon nanotubes (CNTs) and graphene oxide (GO) between carrier glass and PI substrate. Therefore, it was possible to mechanically detach the TFTs on PI substrate and handle them easily even after detachment. The spray-pyrolyzed Al 2 O 3 film is one of the high-k dielectric materials, which can lower the operating voltage, so the low-power consumption of the TFT backplane can be realized. The flexible spray-pyrolyzed a-IGZO/Al 2 O 3 TFT exhibits the field-effect mobility (μ FE ) of 9.75 cm 2 V −1 s −1 , threshold voltage (V TH ) of −0.8 V, subthreshold swing (SS) of 0.29 V dec −1 , and on/off current ratio of 6.2 × 10 7 . Even without TFT passivation layer, it shows environmental stability. The TFTs show robust electrical performance even under tensile strain with a bending radius of 1 mm. In addition, it showed stable electrical characteristics even in the repeated bending test of 30,000 cycles under compressive strain with a bending radius of 1 mm. This is due to fewer defects resulting from the smooth interface of the a-IGZO film and the Al 2 O 3 film deposited through spray pyrolysis. Therefore, spray-pyrolyzed a-IGZO/Al 2 O 3 TFT fabricated on PI substrate is a promising candidate for next-generation foldable display application. Figure 1
DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Qazi Zahid Husain,Dianne Corsino,Federica Catania,Koichi Ishida,Tilo Meister,Frank Ellinger,Niko Münzenrieder,Giuseppe Cantarella

DOI: https://doi.org/10.1109/ted.2024.3453220

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:Thin-film transistors (TFTs) play a vital role in flexible electronics. Here, vacuum-processed amorphous indium-gallium–zinc-oxide-based TFTs are fabricated on a m thick polyetheretherketone (PEEK) flexible substrate. The ac and dc performances of TFTs with channel length down to m are studied. The devices exhibit effective mobility, threshold voltage, and on-/off-current ratio 19.6 cm V s , 2.9 V, and , respectively. To address device stability, bias stress tests are performed, resulting in the maximum variation in the threshold voltage of +0.3 and −0.6 V for a gate voltage stress of +5 and −5 V, respectively, applied for 10 min. The ac performances of InGaZnO (IGZO)-based TFT on this substrate are reported for the first time. Here, the measured unity gain current frequency and unity gain power frequency are 5.4 and 28.5 MHz. Additionally, the TFTs stay fully functional when bent to radii as small as 3 mm exhibiting only minor mobility and threshold voltage variations of +0.4% and −0.2 V. After a dynamic bending test up to 5000 cycles, the mobility and threshold voltage of the TFT deviate by +12.9% and +0.2 V, respectively. These results demonstrate that biocompatible PEEK is a potential substrate for the realization of future unobtrusive wearable systems.

engineering, electrical & electronic,physics, applied
Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiang Xiao,Letao Zhang,Yang Shao,Xiaoliang Zhou,Hongyu He,Shengdong Zhang

DOI: https://doi.org/10.1021/acsami.7b13211

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al2O3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al2O3 is formed using a localized anodization technique. The anodized Al2O3 passivation layer shows a superior passivation effect to that of PECVD SiO2. The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm2/V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 108, and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.
Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Luisa Petti,Giuseppe Cantarella,Julio C. Costa,Niko S. Münzenrieder

DOI: https://doi.org/10.1117/12.2586626

2021-03-05

Abstract:The tremendous advances flexible electronics has experienced have led to the demonstration and - in some cases - commercialization of a plethora of devices, such as foldable displays, ubiquitously integrated sensor systems, and imperceptible implants. All these systems call for specialized analog circuits capable to transmit and receive data, condition sensors, drive actuators or control powering devices. Nevertheless, the current availability of materials and processes compatible with flexible foils imposes limitations to the realization of high-performance flexible analog systems. Among state-of-the-art technologies, amorphous metal oxides – and especially Indium-Gallium Zinc-Oxide (IGZO) – thin-film-transistors (TFTs), are extremely suited due to their electrical and mechanical performance. Here, we present TFTs based on IGZO semiconductor and Al2O3 insulating layers on polyimide substrates. First, we summarize different approaches to reduce the transistor channel length (down to 160 nm), together with their influence on the AC performance. Even though sub-500 nm lengths are demonstrated for TFTs fabricated using vertical structures, direct laser writing and focused ion beam milling, the highest transit and oscillation frequencies of respectively 135 MHz and 398 MHz, are achieved by 500 nm long self-aligned TFTs. We then show how flexible IGZO TFTs enable the realization of complex, flexible analog circuits operating at frequencies up to 20 MHz. However, even if remarkable performances are demonstrated for flexible NMOS circuits, their unipolar characteristics results in limited gain, high power consumption and complex design. To overcome this, we also show how the complementation of IGZO with ptype carbon nanotubes results in flexible common-source CMOS amplifiers with gain of 28.7 dB.
Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Honglong Ning,Xuan Zeng,Hongke Zhang,Xu Zhang,Rihui Yao,Xianzhe Liu,Dongxiang Luo,Zhuohui Xu,Qiannan Ye,Junbiao Peng

DOI: https://doi.org/10.3390/membranes12010029

IF: 4.562

2021-12-27

Membranes

Abstract:Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

engineering, chemical,materials science, multidisciplinary,polymer science,chemistry, physical
P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel Towards Flexible Applications

Sisi Wang,Lei Lu,Jiapeng Li,Zhihe Xia,Hoi Sing Kwok,Man Wong

DOI: https://doi.org/10.1002/sdtp.12772

2018-01-01

Abstract:Towards to the requirements of the low processing temperature for the flexible application, elevated‐metal metal oxide (EMMO) thin‐film transistors with fluorinated indium‐gallium‐zinc oxide (IGZO) channel were fabricated at the highest temperature of 300°C. The effect of Von dependence on channel length was reduced in the fluorinated channel. And the Von of the devices, especially for the short channel with L=2µm, are improved by this fluorination treatment. The results show that the short time plasma treatment is an effective method to decrease the thermal budget and enhance scalability in the flexible application fabrication.
Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Ho‐Nyun Lee,Jaewoo Kyung,Myeon‐Chang Sung,Do Youl Kim,Sun Kil Kang,Seong‐Joong Kim,Chang Nam Kim,Hong‐Gyu Kim,Sung‐Tae Kim,Ho-Nyun Lee,Myeon-Chang Sung,Seong-Joong Kim,Hong-Gyu Kim,Sung-Tae Kim

DOI: https://doi.org/10.1889/1.2841860

2008-01-01

Journal of the Society for Information Display

Abstract:Abstract— An indium gallium zinc oxide (IGZO) film with an amorphous phase was deposited and had a very flat morphology with a RMS value of 0.35 nm. IGZO TFTs were fabricated on a glass substrate by conventional photolithography and wet‐etching processes. IGZO TFTs demonstrated a high mobility of 124 cm2/V‐sec, a high on/off ratio of over 108, a desirable threshold voltage of 0.7 V, and a sub‐threshold swing of 0.43 V/decade. High mobility partially resulted from the fringing‐electric‐field effect that leads to an additional current flow beyond the device edges. Therefore, considering our device geometry, the actual mobility was about 100 cm2/V‐sec, and had a very low dependence on the variation of W/L (channel width and length) and thickness of the active layer. IGZO TFTs were also fabricated on a flexible metal substrate for a conformable display application. TFT devices showed an actual mobility of 72 cm2/V‐sec, a high on/off ratio of ∼107, and a sub‐threshold swing of 0.36 V/decade. There was no significant difference before, during, or after bending. Moreover, an IGZO TFT array was fabricated and a top‐emitting OLED device was successfully driven by it. Therefore, the oxide TFT could be a promising candidate as a backplane for OLED devices.

engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied

P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

24‐4: Flexible AMOLED Based on Oxide TFT with High Mobility

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

47-4:Invited Paper: Flexible AMOLED Based on Oxide TFT with High Mobility

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

P‐11: Development of Easy‐debonding IGZO TFT Array on Flexible PI Substrate at Low Temperature

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Flexible Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Aluminum Oxide Gate Insulator on Polyimide Substrate By Spray Pyrolysis for Foldable Display

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel Towards Flexible Applications

Oxide TFT with multilayer gate insulator for backplane of AMOLED device