Abstract:Two innovations in thin‐film devices promise improved image quality and power consumption for flat panel displays: amorphous metal gate thin‐film transistors (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Sharing a mass‐producible thin‐film amorphous metal, these innovations create near‐ and long‐term roadmaps simplifying the production of "fast, flexible, and simple" high‐image quality, low‐power consumption displays on glass and plastic. Today's display industry faces transistor‐level challenges similar to those of complementary metal‐oxide semiconductor (CMOS) metal‐oxide semiconductor field‐effect transistors (MOSFETs) in the mid‐1990s. Learnings from MOSFETs inform the display industry's response to the limitations of silicon‐based thin‐film transistors (TFTs). Improvements sustaining Moore's Law drove the need to rethink MOSFET materials and structures. The display industry needs fundamental innovation at the device level. New thin‐film devices enable an inflection point in the use of displays, just as fin field‐effect transistor (FinFET) defined the inflection point in CMOS in the 2000s. This paper outlines two innovations in thin‐film device technology that offers improvement in image quality and power consumption of flat panel displays: amorphous metal gate TFTs (AMeTFTs) and amorphous metal nonlinear resistors (AMNRs). Linked through a single core material set based on mass‐producible, thin‐film amorphous metals, these two innovations create near‐ and long‐term roadmaps simplifying the production of high‐image quality, low‐power consumption displays on glass (now) and plastic (future). In particular, the field‐effect mobility of indium gallium zinc oxide (IGZO) AMeTFTs (55–72 cm2/Vs) exceeds that of IGZO TFTs developed by existing display manufacturers without the need for atomic layer deposition or vertical stacking of heterostructure semiconductor films, making AMeTFTs a natural choice for the new G8.5–G8.7 fabs targeting IGZO backplanes.

Flexible a-IGZO TFT Technology: New Developments & Applications

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Bendable metal oxide thin-film transistors and circuits for analog electronics applications

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Flexible Thin-Film Transistor and Integration Strategies for Future Intelligent Displays

Sub-Micron Oxide TFT for the Era of Oxide-Based Display

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Indium–gallium–zinc–oxide Thin-Film Transistors:Materials,devices, and Applications

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Innovations in thin‐film electronics for the new generation of displays

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications

Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics