Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Jiaqi Song,Xiaodong Huang,Chuanyu Han,Yongqin Yu,Yantao Su,Puito Lai
DOI: https://doi.org/10.1002/pssa.202000527
2021-02-17
physica status solidi (a)
Abstract:<p>Flexible InGaZnO thin‐film transistors (TFTs) have been extensively investigated over the last decade with an aim to transferring electronic devices from rigid substrates to light‐weight, soft and flexible ones, and the recent developments in this field are reflected in this review. Firstly, an introduction to flexible InGaZnO TFT is provided, where the superiority over its rigid counterparts is illustrated, together with its excellent compatibility with flexible applications. Then, the TFT structures are exhibited with their primary film layers, and the material choice and process selection are presented for each layer to explain the fabrication of flexible InGaZnO TFTs with high performance. Afterward, the recent advances on the electrical performance (including both DC and AC characteristics) of the flexible InGaZnO TFTs achieved by either material optimization or structure innovation are summarized, and their operating principles and improvement mechanisms are clarified. Next, the recent progresses on the mechanical flexibility of flexible InGaZnO TFTs are presented according to improvement methods, such as addition of passivation layer, innovation of gate dielectric or flexible substrate, thinning of flexible substrate, optimization of gate dielectric or InGaZnO layer, and new TFT structure. All these improvements enable the flexible InGaZnO TFTs to endure smaller bending radius and more bending cycles even under electrical and illumination stresses. In particular, the mechanisms concerning mechanical bending are demonstrated in detail, which successfully explain the bending‐induced instability in electrical characteristics of flexible InGaZnO TFTs in numerous studies. Finally, the challenges in this area are summarized as guidance for future research.</p><p>This article is protected by copyright. All rights reserved.</p>
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