Abstract:Highlights A stable laminated Al 2 O 3 /HfO 2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al 2 O 3 /HfO 2 insulator. The flexible TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 . Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al 2 O 3 /HfO 2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In 0.37 Ga 0.20 Zn 0.18 O 0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al 2 O 3 /HfO 2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al 2 O 3 , crystallized HfO 2 , and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm 2 V −1 s −1 , ON/OFF ratio of ~ 1.3 × 10 6 , subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec −1 , signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

P‐11: Development of Easy‐debonding IGZO TFT Array on Flexible PI Substrate at Low Temperature

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

P‐130: Reliable Flexible Elevated Metal Metal‐Oxide IGZO TFTs

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

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15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

Flexible OLED display with 620°C LTPS TFT and touch sensor manufactured by weak bonding method

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

P‐2: Effect of Buffer Layer on Performance and Reliability of Flexible a‐IGZO TFTs Fabricated on Colorless Polyimide of G4.5

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

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P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

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Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors