Abstract:Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influences of various ambient effects and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobic, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt. % F–P passivated IGZO TFTs showed improved performance in saturation mobility ( μ sat ) from 6.23 ± 0.21 to 7.02 ± 0.38 cm 2 /Vs, an on-off current ratio ( I on / I off ) from (4.05 ± 0.84) × 10 5 to (3.75 ± 2.32) × 10 8 , and a subthreshold swing ( SS ) from 1.79 ± 0.30 to 0.41 ± 0.04 V/decade compared to the pristine device without the F–P PVL. After the 15-day stability test via ambient effects, μsat increased from 7.02 ± 0.38 to ~8 cm 2 /Vs; I on / I off increased from (3.75 ± 2.32) × 10 8 to ~10 10 and the SS values were maintained at a low level (≤ 0.6 V/dec.). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H 2 O and O 2 . With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices.

P‐2: Effect of Buffer Layer on Performance and Reliability of Flexible a‐IGZO TFTs Fabricated on Colorless Polyimide of G4.5

High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Environmentally friendly, flexible and high performance PVA dielectric layer fabricated by solution method and its application in IGZO-TFT

Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Effect of ITO Serving As a Barrier Layer for Cu Electrodes on Performance of A-Igzo TFT

Improved Properties of A-Igzo Tft with Inorganic/Organic Stacked Passivation Layer

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Dependence of a Hydrogen Buffer Layer on the Properties of Top-Gate IGZO TFT

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs

Improvement in the Electrical Properties of A-Igzo TFTs by Using PA-PI As a Modification Layer

P‐10.1: Low‐voltage Flexible Thin‐film Transistor Based on C3N4/polyvinylpyrrolidone Composite Electrolyte

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

All-Sputtered, Flexible, Bottom-Gate Igzo/Al2o3 Bi-Layer Thin Film Transistors on Pen Fabricated by A Fully Room Temperature Process