Abstract:Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted considerable attention for cutting-edge and next-generation electronics applications because of their high field-effect mobility, low leakage current, superior uniformity, and high transparency. On the other hand, maintaining stable electrical performance under the influences of various ambient effects and complex operating environments is a serious application problem. Hence, a fluoroacrylate-incorporated polytetrafluoroethylene (F–P) is proposed as a new material for passivation layers (PVLs) of a-IGZO TFTs. Solution process-based F–P PVLs were introduced to overcome the intrinsically brittle nature of inorganic materials and enhance the long-term stability of organic materials because of their excellent flexibility, hydrophobic, and chemical stability. This also provides a simple and cheaper alternative for practical applications. The F–P PVLs with different concentrations exhibited appropriate improvements in stability and electrical performance. Of these, the 1.0 wt. % F–P passivated IGZO TFTs showed improved performance in saturation mobility ( μ sat ) from 6.23 ± 0.21 to 7.02 ± 0.38 cm 2 /Vs, an on-off current ratio ( I on / I off ) from (4.05 ± 0.84) × 10 5 to (3.75 ± 2.32) × 10 8 , and a subthreshold swing ( SS ) from 1.79 ± 0.30 to 0.41 ± 0.04 V/decade compared to the pristine device without the F–P PVL. After the 15-day stability test via ambient effects, μsat increased from 7.02 ± 0.38 to ~8 cm 2 /Vs; I on / I off increased from (3.75 ± 2.32) × 10 8 to ~10 10 and the SS values were maintained at a low level (≤ 0.6 V/dec.). The improvement was induced by lower surface energy and better hydrophobicity from F–P PVLs, which can effectively reduce the adsorption behavior of H 2 O and O 2 . With a lower oxygen-related interface trap density, the electrical performances were improved by a suitable concentration-based F–P PVL. In addition, the F–P PVL can provide a long-term guarantee of stability and reliability for a-IGZO TFTs, which will have potential applications for wearable devices and multi-environment electronics devices.

Improved Properties of A-Igzo Tft with Inorganic/Organic Stacked Passivation Layer

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD

Improvement in the Electrical Properties of A-Igzo TFTs by Using PA-PI As a Modification Layer

Improvements in passivation effect of amorphous InGaZnO thin film transistors

Improvement of properties of top-gate IGZO TFT by oxygen-rich ultrathin in situ ITO active layer

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Surface Passivation Engineering Approach to Fluoroacrylate-Incorporated Polytetrafluoroethylene for Highly Reliable a-IGZO TFTs

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

Enhancement of A-Igzo TFT Device Performance Using a Clean Interface Process Via Etch-Stopper Nano-layers

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays