Abstract:High-resolution active-matrix organic light-emitting diode (AMOLED) thin-film transistor (TFT) backplane with lower power consumption is needed for augmented reality (AR) applications. The near-to-eye format of AR terminals needs facing several technical challenges, such as higher optical efficiency, wider field of view, lighter weight, and smaller size to accelerate widespread applications. For these reasons, downscaling of TFTs with amorphous-indium-gallium-zinc-oxide (a-IGZO) or LTPS is required. The channel length should be less than 1 μm and the flexible substrate is better than glass because of light weight and very thin structure. TFT technologies on polyimide (PI) substrate can support the applications for foldable and rollable displays. For flexible AMOLED, PI layer of 10 to 20 um is widely used for foldable displays. The PI layer is coated by slot coating on the top of a carrier glass with a buffer layer of carbon nanotubes (CNTs) and graphene oxide (GO) mixture coated by spray. This layer can reduce the adhesion force between PI and glass and thus mechanical detachment can be possible. The CNTs are conducting so that it can release the electrostatic discharge (ESD) damage because CNTs/GO layer exists on the bottom side of the PI substrate. The PI substrate is covered by SiO 2 and ZrAlO x layers (five layers in total starting with SiO 2 ) by plasma enhanced chemical vapor deposition and spray pyrolysis, respectively, which acts as a gas barrier. The amorphous ZrAlO x film by spray coating can be used as a high-k gate insulator and also a gas barrier. The threshold voltage of a-IGZO TFTs tends to shift toward negative gate voltage with decreasing the channel length. In this work, a ZrAlO x passivation layer is introduced for the short channel, coplanar a-IGZO TFT. A very thin ZrAlO x layer is deposited by spray pyrolysis on the top of a-IGZO TFT at the substrate temperature of 350 °C before interlayer deposition. The a-IGZO TFT with a very thin ZrAlO x layer exhibits the stable threshold voltage dependence with decreasing the channel length. The 0.8 μm channel length a-IGZO TFT with ZrAlO x layer by spray pyrolysis at the substrate temperature of 350 °C exhibits the field-effect mobility of 7.09 cm 2 V -1 s -1 , the threshold voltage of -0.6 V, and on/off current ratio of 3.3 × 10 7 . The formation of Zr-O bonds on the a-IGZO surface region reduces the carrier concentration in the a-IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This is the first reported self-aligned coplanar a-IGZO TFT under 1 μm channel length on a flexible substrate. Figure 1

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

Remarkable Stability Improvement with a High‐Performance PEALD‐IZO/IGZO Top‐Gate Thin‐Film Transistor via Modulating Dual‐Channel Effects

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors

97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

P-1.14: The Influence of Dual-channel on the Performance of Self-Align Top-Gate IGZO Thin Film Transistors

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Improved mobility and bias stability of Hf-doped IGZO/IZO/Hf-doped IGZO thin-film transistor

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

(Invited) Short Channel Coplanar Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors on Polyimide Substrate for High Resolution Displays

A Study of Thin Film Encapsulation on Improving Electrical Characteristics and Reliability for Flexible OLEDs

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Improved high voltage operation of amorphous In-Ga-Zn-O thin film transistor by carrier density enhancement