Abstract:In the fabrication of flexible a‐IGZO and LTPS thin film transistor (TFT) hybrid backplane, various threshold voltage (Vth) of the a‐IGZO TFT was achieved in this paper by regulating the O 2 /Ar ratio during the deposition of a‐IGZO film by sputtering. The results show that the Vth increases with the increase of the O 2 /Ar ratio, and the reliability tests indicate that in a certain range negative adjustment of Vth can significantly improve the positive bias temperature instability (PBTI) of IGZO TFT, and maintain good electrical uniformity. The increase of the O 2 /Ar ratio reduces the number of oxygen vacancy (Vo) in the a‐IGZO channel, and thereby Vth is positively shifted, which is confirmed by the TCAD simulation. The Vth value can indicate the Vo concentration in a‐IGZO TFT channel partly, and appropriately higher amount of Vo is beneficial to improve the PBTI, which is attributed to Fermi level (EF) shifting closer to conduction band. Raised EF means less unoccupied trap states, resulting in less carrier trapping under PBTI. Furthermore, the research also explores different a‐IGZO channel thicknesses and finds that when the Vth values are similar, thinner channel layers endow a‐IGZO TFT with improved PBTI. By optimizing the Vth and channel thickness, a‐IGZO TFTs with a channel thickness of 25nm and a Vth value of 0.2V have been prepared in a hybrid backplane. Under positive bias temperature stress for 5 hours, the Vth is positively shifted less than 0.5 V, which could lay the foundation for achieving high‐reliability flexible backplane for AMOLEDs.

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Advanced hybrid process with back contact IGZO‐TFT

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

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P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

P‐17: Design of AMOLED Pixel Circuit Using LTPO TFTs with Enhanced Reliability

Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Improved Properties of A-Igzo Tft with Inorganic/Organic Stacked Passivation Layer

Dual-Gate A-Igzo TFTs for Gate Driver Application

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

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Oxide TFT with multilayer gate insulator for backplane of AMOLED device

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Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics