Abstract:In this comprehensive study, we rigorously evaluated the applicability of amorphous indium gallium zinc oxide (a‐IGZO) thin films synthesized using atomic layer deposition (ALD) technology in the field of large‐area organic light‐emitting diode (OLED) TVs. The key term to display production is the distribution of device characteristics, and maintaining uniformity can improve productivity yield and product quality. The purpose of this paper is to present guidelines for early application in industry through the process variable exploration results of ALD deposition equipment. The process parameters studied are process pressure and oxygen partial pressure (PO 2 ). We have secured a method to secure device characteristics suitable for display technology through the correlation between a‐IGZO thin film characteristics and device characteristics through corresponding parameters. Our empirical data strongly demonstrate that the threshold voltage (V th ) stabilizes near 0.0 V and consistently achieves device mobility exceeding 15 cm 2 /Vs. In particular, this study shows that the variability of the Vth characteristic, which is limited to a narrow range of less than ±0.1V, is greatly reduced, and the mobility dispersion is also greatly reduced to less than ±1cm 2 /Vs. A deeper analytical exploration revealed that the pivotal factors affecting device performance are closely related to oxygen vacancies (V o ) and their dynamic interactions with oxygen molecules. These results will improve the uniformity of device characteristics, and it is believed that the introduction of ALD technology into future display technology will demonstrate improvements in the performance and quality of display products.

97‐2: Late‐News Paper: Development of High‐Mobility Indium‐rich IGZO TFT Device for IT OLED Display

97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays

15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

P‐1.12: Development of 5.5‐inch FHD LCD with BCE IGZO‐TFT and DeMUX Technology

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Indium–gallium–zinc–oxide Thin-Film Transistors:Materials,devices, and Applications

High Mobility, Low Off-Current, and Flexible Fiber-Based a-InGaZnO Thin-Film Transistors toward Wearable Textile OLED Displays

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

8.1: Invited Paper: 17‐inch Flexible IGZO OLED Display by Ink‐jet Printing Method

P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

48‐4: Late‐News Paper: Evaluation of a‐IGZO Channel Characteristics to Improve the Performance of Oxide TFT

IGZO‐TFT technology for large‐screen 8K display

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics