Abstract:Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600C down to 400C. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200C or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.

A Novel Ultrathin Elevated Channel Low-Temperature Poly-Si TFT

A Novel Ultra-Thin Channel Poly-Si TFT Technology

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

Low Temperature Poly-Si TFT Technology

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

A Novel Self-Aligned Double-Gate TFT Technology

A novel thin-film transistor using carbon nanotubes as both channel and electrodes

Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Solution Processed Organic Thin-Film Transistors with Hybrid Low/High Voltage Operation

Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield