Abstract:Mechanically flexible vertical-channel-structured thin-film transistors (VTFTs) with a channel length of 200 nm were fabricated on 1.2 μm thick colorless polyimide (CPI) substrates. All layers composing the gate stacks were prepared by atomic-layer deposition (ALD) with a good step coverage, and the process thermal budget was designed below 180 °C. Zeocoat was introduced as a spacer material to improve the device characteristics by properly determining the process conditions for clearly forming the vertical sidewalls. The transfer characteristics of the fabricated flexible ZnO and IGZO VTFTs showed the field-effect mobility of 3.31 and 6.57 cm2 V–1 s–1, the threshold voltages of 2.34 and 1.52 V, the subthreshold swings of 1.42 and 0.34 V/dec, and I ON/I OFF of 1.13 × 104 and 5.16 × 105, respectively, after the postannealing at 150 °C. The threshold voltage shifts (ΔV TH) under positive and negative bias stresses (PBS and NBS) were estimated to be +1.0, +1.8 V and −1.8, −3.8 V for 104 s for ZnO and IGZO VTFTs, respectively. The flexible IGZO VTFTs delaminated by means of a laser lift-off process did not show any marked degradation in device characteristics under mechanically strained conditions at various radii of curvature (R c). The ΔV TH values were also estimated to be +1.2 and −2.1 V under PBS and NBS at R c of 1 mm, respectively, demonstrating stable bending reliability. Appropriate choices of spacer materials, optimization of patterning process for spacer patterns, and ALD process of IGZO active channel can be proposed as key process parameters for guaranteeing excellent device performance of the oxide-channel VTFTs in this work.

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Transparent Thin-Film Transistors Based on c-Axis Oriented, Verti cally Aligned ZnO Nanorod Arrays via Solution Pro cessing

Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

Micron Channel Length ZnO Thin Film Transistors Using Bilayer Electrodes

Amorphous IZO-based transparent thin film transistors