Abstract:In this work, we report on back-end-of-line (BEOL)-compatible InGaZnO indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with extreme scaled device dimension including channel thickness ( $\textit{T}_{\text{ch}}\text{)}$ down to 1.5 nm and channel length ( $\textit{L}_{\text{ch}}\text{)}$ down to 60 nm. These IGZO channels with a high In atomic ratio of 92% were derived by atomic-layer-deposition (ALD), where the IGZO thickness could be precisely controlled by ALD cycles. These TFTs were subjected to a mild O $_{\text{2}}$ annealing at 250 $^{\circ}$ C, the effect of which is also systematically investigated. It is found that both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing have significant effects on TFT performance. By using optimized O $_{\text{2}}$ annealing conditions, the ALD IGZO TFTs with scaled $\textit{T}_{\text{ch}}$ of 1.5 nm and $\textit{L}_{\text{ch}}$ of 60 nm exhibit desirable electrical performance including a high ON/OFF ratio ( $\textit{I}_{\biosc{on}}$ / $\textit{I}_{\biosc{off}}\text{)}$ $\sim$ 10 $^{\text{11}}$ , a decent high Ion of 354 $\mu$ A/ $\mu$ m under $\textit{V}_{\text{DS}}$ of 1.2 V, a steep subthreshold swing (SS) of 68 mV/dec, a small drain-induced-barrier-lowering (DIBL) of 30 mV/V, and a normal-off operation, which is comparable to the state-of-art sputtered IGZO TFTs. Furthermore, the optimized TFTs also exhibit significantly resolved threshold voltage ( $\textit{V}_{\text{T}}\text{)}$ roll-off and a remarkably high degree of stability to the positive gate bias stress (PBS). A trap model with its possible microscopic origin is proposed, which explains well the dependence of electrical performance on both $\textit{T}_{\text{ch}}$ and O $_{\text{2}}$ annealing, thus providing a new insight into the reliability of IGZO TFTs.

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Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

Fabrication and performance of indium oxide based transparent thin film transistors

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Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

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Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition