Abstract:In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on-off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm²/V · s, subthreshold swing of 470 mV/dec, and on-off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Effect of source–drain contact and channel length on the performance of vertical thin-film transistors

High-performance nano-scale InSnO transistors

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

High‐Performance Back‐Channel‐Etched Thin‐Film Transistors with an InGaO/InZnO Stacked Channel

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

Transparent Junctionless Thin-Film Transistors with Tunable Operation Mode

Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing

P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

Indium Zinc Oxide Nanosheet Transistor with 2 nm Channel Thickness for Monolithic Three-dimensional Integrated Circuit

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

High Resolution Inkjet Printed Oxide Thin Film Transistors with Self-Aligned Fine Channel Bank Structure.