Abstract:In this study, an inorganic–organic hybrid thin-film transistor (TFT) with a top-gate structure is prepared using an inorganic ZnSnO film prepared via pulse plasma deposition as the channel layer and an organic polymethyl methacrylate film prepared by the solution method as the dielectric layer. The effect of oxygen pressure during the preparation of the ZnSnO channel layer and channel-layer structure on ZnSnO TFT performance was studied. The results show that increasing the oxygen pressure during the preparation process can effectively inhibit the formation of oxygen vacancies in ZnSnO and reduce the concentration of electron carriers in ZnSnO, resulting in a reduced off current and a positive shift of the threshold voltage ( V th ) in the single-channel layer ZnSnO TFT. In addition, a high-resistivity ZnSnO layer (Lt; with a lower electron-carrier concentration) is embedded between the low-resistivity ZnSnO layer (Lb; with a higher electron-carrier concentration) and the dielectric layer to form a high-/low-resistivity double-channel-layer structure (Lt/Lb). By changing the thickness combination of Lt/Lb, the resistance of the channel layer and the number of carriers modulated by gate voltage in the channel layer can be optimized, thereby adjusting the device's on current (affecting device mobility) and key energy consumption parameters (i.e., V th and off current) to achieve independent control. Thus, the fabricated double-channel-layer ZnSnO TFT exhibits excellent performance: high mobility (3.28 cm 2 /Vs), positive V th close to 0 V (0.48 V), and on-to-off current ratio of > 10 5 .

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Dip-coated Al–In–Zn–O Thin-Film Transistor with Poly-Methylmethacrylate Gate Dielectric

Low-temperature preparation and characteristics of top-gate thin film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

High-Performance Mo-Zn-O Oxide Transistors with Double Channels

High-Performance Al–Sn–Zn–O Thin-Film Transistor with a Quasi-Double-Channel Structure

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

High-performance Fully Transparent Al–Sn–Zn–O Thin-Film Transistors Using Double-Channel Structures

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT