Abstract:For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitance formed between the source/drain (S/D) and the gate electrodes. From this perspective, self-aligned top-gate oxide TFTs can provide advantages such as a low parasitic capacitance for high-speed displays due to minimized overlap between the S/D and the gate electrodes. Here, we demonstrate self-aligned top-gate oxide TFTs using a solution-processed indium-gallium-zinc-oxide (IGZO) channel and crosslinked poly(4-vinylphenol) (PVP) gate dielectric layers. By applying a selective Ar plasma treatment on the IGZO channel, low-resistance IGZO regions could be formed, having a sheet resistance value of ~20.6 kΩ/sq., which can act as the homojunction S/D contacts in the top-gate IGZO TFTs. The fabricated self-aligned top-gate IGZO TFTs exhibited a field-effect mobility of 3.93 cm2/Vs and on/off ratio of ~106, which are comparable to those fabricated using a bottom-gate structure. Furthermore, we also demonstrated self-aligned top-gate TFTs using electrospun indium-gallium-oxide (IGO) nanowires (NWs) as a channel layer. The IGO NW TFTs exhibited a field-effect mobility of 0.03 cm2/Vs and an on/off ratio of >105. The results demonstrate that the Ar plasma treatment for S/D contact formation and the solution-processed PVP gate dielectric can be implemented in realizing self-aligned top-gate oxide TFTs.

A Novel Self-Aligned Double-Gate TFT Technology

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

A Self-Aligned Double-Gate Polysilicon Tft Technology

Fabrication and Properties of Self-Aligned Double-Gate Poly-Si TFT

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Implementation of Fully Self-Aligned Homojunction Double-Gate A-Igzo Tfts

Reduction of Off-Current in Self-Aligned Double-Gate TFT with Mask-Free Symmetric LDD

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

Self-aligned Offset Gate Poly-Si TFTs Using Photoresist Trimming Technology

Implementation of Fully Self-Aligned Bottom-Gate MOS Transistor

Flexible Self-Aligned Double-Gate IGZO TFT

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

A Novel Ultrathin Elevated Channel Low-Temperature Poly-Si TFT

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors