Abstract:In this paper, the effect of the nonself-aligned process on the performance variation of a bottom-gate metal oxide semiconductor (MOS) transistor is discussed using a device simulator. The simulation results predict that the nonself-aligned bottom-gate MOS transistor cannot be scaled into the deep submicron regions. A simple fully self-aligned bottom-gate (FSABG) metal oxide semiconductor field effect transistor (MOSFET) technology is then proposed and developed. A new technique for forming thermal oxide on poly-Si serving as the bottom-gate dielectric is also investigated. It is found that the quality of the oxide on the poly-Si recrystallized by the metal induced uni-lateral crystallization.(MIUC) is much higher than that by the solid phase crystallization (SPC). Deep submicron fully self-aligned bottom-gate pMOS transistors are fabricated successfully using the proposed technology. The experimentally measured results indicate the device performances depend strongly on the channel-width, and get comparable to that of a single crystal MOSFET if the channel width is less than 0.5 mum. The effects of the channel width on the device performances are discussed. In addition, the experimental results also confirm that the proposed technology has a good control of the channel film thickness.

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Submicron 3-D SRAM

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

A Self-Aligned Gate-All-Around Mos Transistor On Single-Grain Silicon

Implementation of Fully Self-Aligned Bottom-Gate MOS Transistor

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

A Self-Aligned Double-Gate Polysilicon Tft Technology

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Strained silicon dynamic threshold voltage MOSFETs for low voltage and ultra high speed CMOS circuits

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A Novel Self-Aligned Double-Gate TFT Technology

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Novel Gate-Grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain