Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

A Self-Aligned Gate-All-Around Mos Transistor On Single-Grain Silicon

A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Submicron 3-D SRAM

Implementation of Fully Self-Aligned Bottom-Gate MOS Transistor

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

A Self-Aligned Double-Gate Polysilicon Tft Technology

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate

A Novel Self-Aligned Double-Gate TFT Technology

High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate from Top-Down Approach: Simulation and Fabrication

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film

Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

A method for producing surround gate silicon nanowire transistor with air as the side wall

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

A Gate-All-Around Tunneling Field-Effect Transistor with SiO2 Core and Si Shell Structure

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

Fabrication and Transport Behavior Investigation of Gate-All-Around Silicon Nanowire Transistor from Top-Down Approach