Abstract:Introduction: This work proposes a Double-Gate (DG) MOSFET with a Single Material made of Silicon On-Insulator (SOI). The Lanthanum Oxide material with a high k-dielectric constant has been used as an interface between two gates and the channel. The Monte Carlo analysis has been used to determine the Conduction Band Energy (Ec) profiles and electron sheet carrier densities (ns) for a Silicon channel thickness (tsi) of 10 nm at 0.5 V gate drain-source voltages. The transverse electric fields are weak at the midchannel of DG SOI MOSFETs, where quantum effects are encountered. The Monte Carlo simulation has been confirmed to be effective for high-energy transport. A particle description reproduces the granularity property of the transport for nanoscale modeling. background: Basics of Quantum effects and effects of inversional layer were discussed Methods: This work utilizes a Monte Carlo (MC) Simulation for the proposed Double Gate Single Material Silicon On Insulator MOSFET with (La2O3=2 nm) as dielectric oxide on upper and lower gate material. The electrical properties of the DG SOI MOSFETs with Lanthanum Oxide were analyzed using Monte Carlo simulation, including the conduction band energy, electric field, potential distribution, particle movement, and average velocity. objective: The Monte Carlo analysis has been used to determine the Conduction Band Energy (Ec) profiles and electron sheet carrier densities (ns) for a Silicon channel thickness (tsi) of 10 nm at 0.5 V gate drain-source voltages. The transverse electric fields are weak at the midchannel of DG SOI MOSFETs, where quantum effects are encountered. The Monte Carlo simulation has been confirmed to be effective for high-energy transport. A particle description reproduces the granularity property of the transport for nanoscale modeling. Results: The peak electric field (E) simulation results and an average drift velocity (υavg) of 6Í105 V/cm and 1.6Í107 cm/s were obtained, respectively. The conduction band energy for the operating region of the source has been observed to be 4 % to the drain side, which obtained a value of -0.04 eV at the terminal end. Conclusion: This proposed patent design, such as double-gate SOI-based devices, is the best suggestion for significant scalability challenges. Emerging technologies reach the typical DG SOI MOSFET's threshold performance when their geometrical dimensions are in the nanometer region. This device based on nanomaterial compounds has been more submissive than conventional devices. The nanomaterials usage in the design is more suitable for downscaling and reducing packaging density. result: The peak electric field (E) simulation results and an average drift velocity (υavg) of 6105 V/cm and 1.6107 cm/s were obtained, respectively. The conduction band energy for the operating region of the source has been observed to be 4 % to the drain side, which obtained a value of -0.04 eV at the terminal end. conclusion: This proposed design, such as double-gate SOI-based devices, is the best suggestion for significant scalability challenges. Emerging technologies reach the typical DG SOI MOSFET&amp;#039;s threshold performance when their geometrical dimensions are in the nanometer region. This device based on nanomaterials compound has been more submissive than conventional devices. The nanomaterials usage in the design makes it more suitable for downscaling and reducing packaging density.

Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film

Double-gate SOI MOSFET Fabrication from Bulk Silicon Wafer

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

DDDMOSFET Performance Improvement by Gate Oxide Removal Followed by Silicided Source/Drain Formation in Gate Slots

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A Novel Fin-Shape Double-Gate GaAs p-MOSFET with Intrinsic Source and Enhanced Switching Performance

Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

A novel asymmetric graded low doped drain (AGLDD) vertical channel nMOSFET with sidewall masked (SWAM) LOCOS isolation

A Stacked Cmos Technology on Soi Substrate