Abstract:In our simulation, double-gate polycrystalline silicon thin-film transistors(DG p-Si TFTs) have been studied. We consider the effect of grain boundaries between the grains of polycrystalline silicon, and compared with the experiment. Then, considering the conventional work mode of the double-gate TFTs (DG TFTs), we compare the transfer characteristics of the DG TFT and traditional single-gate TFT (SG TFT). For the channel, the W/L equals to 1.5 mu m/1.5 mu m, the top and bottom SiO2 gate layer are same thickness 100nm. Also, the channel layer is intrinsic silicon and the thickness is 100nm. The DG TFT presents' a significant improvement in current drive and a steeper subthreshold slope. Mainly, we also demonstrate a novel asynchronous working mode, in which the back gate (V-BG) is settled to a fixed voltage. The back gate play a role of precharging the TFT, and we find a larger V-BG leads to a lower threshold voltage. Meanwhile, it should be observed that a large V-BG also results in a decrease of on/off ratio and a deterioration of the subthreshold slope. Thus, the compromise during the threshold voltage, on/off ratio and subthreshold slope is in need.

A Self-Aligned Double-Gate Polysilicon Tft Technology

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

A Novel Self-Aligned Double-Gate TFT Technology

Fabrication and Properties of Self-Aligned Double-Gate Poly-Si TFT

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Implementation of Fully Self-Aligned Homojunction Double-Gate A-Igzo Tfts

Self-aligned Offset Gate Poly-Si TFTs Using Photoresist Trimming Technology

A Self-Aligned Double-Gate Mos Transistor Technology with Individually Addressable Gates

A Hybrid A-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

Asynchronous Double-Gate Polycrystalline Silicon Thin-Film Transistors for AM-OLED Pixel Circuits

Reduction of Off-Current in Self-Aligned Double-Gate TFT with Mask-Free Symmetric LDD

A Self-Aligned Gate-All-Around Mos Transistor On Single-Grain Silicon

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

Implementation of Fully Self-Aligned Bottom-Gate MOS Transistor

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Flexible Self-Aligned Double-Gate IGZO TFT