Abstract:Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

P‐1.20: Stability of Hydrogenated Amorphous Silicon Thin‐Film Transistors in High‐Brightness Liquid Crystal Displays

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

A Comparative Study on Self-Aligned Top-Gate Thin-Film Transistors with Silicon Nitride as the Interlayer

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors

High Performance Transparent In-Plane Silicon Nanowire Fin-Tfts Via A Robust Nano-Droplet-Scanning Crystallization Dynamics

Improvement of Electrical Characteristics and Stability of IGZO TFT Through Surface Single Crystallization of IGZO Film at Room Temperature

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Stability of Amorphous Inalzno Thin-Film Transistors

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

High-Mobility and Good-Stability Thin-Film Transistors with Scandium-Substituted Indium Oxide Semiconductors

Effects of Silicon Doping on the Performance of Tin Oxide Thin Film Transistors

Degradation Mechanism for Continuous-Wave Green Laser-Crystallized Polycrystalline Silicon N-Channel Thin-Film Transistors under Low Vertical-Field Hot-Carrier Stress with Different Laser Annealing Powers

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors