Abstract:Strained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1-xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors

Fully Tensile Strained Partial Silicon-on-insulator N-Type Lateral-Double-diffused Metal-Oxide-semiconductor Field Effect Transistor Using Localized Contact Etching Stop Layers

A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Impact of Stress Induced by Stressors on Hot Carrier Reliability of Strained Nmosfets

MOSFET Performance Manufactured on &lt;100&gt; Silicon Wafer Using CESL Strain Technology with Temperature Effect

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

Stress-assistant selective etching mechanism for lithography-independent nanofabrication

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

CESL Deposition Promoting N/p MOSFETs under 45-Nm-node Process Fabrication

Study of nano-regime strained MOSFETs with temperature effects

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel

Low Stress Silicon Nitride Thin Film Deposition by PECVD

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Investigation of Nanosheet Deformation During Channel-Release in Gate-All-Around Nanosheet Transistors

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped Sno2 Thin-Film