Abstract:A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH 4 ]/[SiH 4 ]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8–2.4 eV by changing the gas ratio, R . Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 10 4 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900°C and 1000°C. The formation of nanocrystalline silicon (nc-Si) dots in amorphous silicon carbide (a-SiC) host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence (EL) was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Structural Nature of Nanocrystalline Silicon

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Study on structural properties of nanocrystalline silicon films

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Growth Morphology and Characteristic Structure in Nanocrystalline Si Film of High Conductivity

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing

Optical Properties of Nanocrystal-Silicon Thin Films on Silicon Nanopillar Arrays after Thermal Annealing

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films