Abstract:For high-performance and high-lifetime flexible and wearable electronic applications, a low-temperature posttreatment method is highly expected to enhance the device performance and repair the defects induced by the low-temperature fabrication process intrinsically. Particularly, if the method can repair the traces induced by the multiple cycles of bending or deforming, it would overcome current fatal obstacles and provide a vital solution to the rapid development of flexible electronics. In this work, we propose a method to apply low-temperature supercritical CO2 fluid with a dehydration function to improve or even restore the performance of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). After the treatment, the a-IGZO TFT exhibits 3 times improvement drivability up to 0.24 mu A/mu m, a smaller subthreshold swing of 0.18 V dec(-1), a smaller V-th of 0.25 V, and a larger I-on/I-off ratio of 3.8 x 10(7). Additionally, the posttreated a-IGZO TFTs possess relatively good uniformity and reproducibility with an on-current standard deviation of 0.047 mu A/mu m, and the performance of the a-IGZO TFT after the treatment remains almost unchanged even after bending 2500 times at a bending radius of 5 mm. These characteristics are attributed to the improved quality of the channel and gate dielectric. It is worth noting that when this is applied to a flexible TFT-driven organic light-emitting diode lighting system, this treatment method can restore the performance of not only the TFT but also the lighting system, even after the system has been bent more than 600 times and has failed. To date, this is the first time that the bending-track erasing function of the supercritical fluid for flexible systems has been reported, which has the potential to prolong the lifetime of flexible electronics.

P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

P‐1.5: Dynamic Current Stress‐Induced Instabilities of A‐ingazno TFTs

Investigating the Back-Channel Effect and Asymmetric Degradation under Self-Heating Stress in Large Size A-Ingazno TFTs

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

The Hump Phenomenon and Instability of Oxide TFT Were Eliminated by Interfacial Passivation and UV + Thermal Annealing Treatment

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Current Temperature Stress Induced Threshold Degradation on Corbino A-Ingazno Transistors

Performance Enhancement And Bending Restoration For Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors By Low-Temperature Supercritical Dehydration Treatment

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

P‐1.4: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Fluorinated Indium‐Gallium‐Zinc Oxide Channel Towards Flexible Applications

Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates