Abstract:A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

Floating-body kink-effect-related parasitic bipolar transistor behavior in poly-Si TFT

Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering Traps at Grain Boundary

Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield

Research and Modeling Kink Effect in Poly-Si Thin Film Transistors

Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Abnormal ${C}$ – ${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent P-Type LTPS TFTs

Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

A Novel Self-Aligned Bottom Gate Poly-Si TFT with In-Situ LDD

Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

Threshold Voltage Shift Effect of a-Si:H TFTs under Bipolar Pulse Bias

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

Polycrystalline-Silicon CMOS Thin-Film Transistors With T-Shaped Gate and Lightly Doped Drain

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Performance Of Asynchronous Double-Gate Poly-Si Thin-Film Transistors

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique