Abstract:Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.

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Investigation of an Anomalous Hump Phenomenon in Via-Type Amorphous In-Ga-Zn-O Thin-Film Transistors under Positive Bias Temperature Stress

Integrated A-Si: H Gate Driver with Low-Level Holding Tfts Biased under Bipolar Pulses

Bias stress induced threshold voltage instability in solution processed organic thin film transistor

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Abnormal Hump and Two-Step Degradation of Top Gate a-InGaZnO TFTs Under Positive Bias Stress

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors under Negative Bias Stress

Analysis of Degradation Mechanism in Poly-Si TFTs under Dynamic Gate Voltage Stress with Short Pulse Width Duration

Abnormal Threshold Voltage Shifts in P-Channel Low Temperature Polycrystalline Silicon TFTs under Deep UV Irradiation

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

Abnormal Bias Instabilities Induced by Lateral H2O Diffusion into Top-Gate Insulator of A-Ingazno Thin-Film Transistors

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness