Abstract:Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the “γ-phase” and (ii) the site preference(s) for these dopants promotes the formation of “γ-phase” and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs.

Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Growth and characterization of the β-Ga 2 O 3 (011) plane without line-shaped defects

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification

Characteristics of 4-Inch (100) Oriented Mg-doped Β-Ga2o3 Bulk Single Crystals Grown by a Casting Method

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

Deformation and fracture behaviors of monocrystalline β-Ga 2 O 3 characterized using indentation method and first-principles calculations

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Fracture Toughness and Critical Thickness of β-(InxGa1-x)2O3 / Ga2O3 by First Principles

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality

Microstructural analysis of heteroepitaxial -Ga<sub>2</sub>O<sub>3</sub> films grown on (0001) sapphire by halide vapor phase epitaxy

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

The Surface Tension of Ga2O3 Melt Measured by a Drop-Weight Method in an Optical Floating-Zone Furnace

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition