Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Orientation-Dependent Atomic-Scale Mechanism of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth

Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds

Microstructural analysis of heteroepitaxial -Ga<sub>2</sub>O<sub>3</sub> films grown on (0001) sapphire by halide vapor phase epitaxy

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

Epitaxial Growth of (-201) β-Ga2O3 on (001) Diamond Substrates

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio

Offcut-related step-flow and growth rate enhancement during (100) $β$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Deformation and fracture behaviors of monocrystalline β-Ga 2 O 3 characterized using indentation method and first-principles calculations

((3)Over-Bar10)-oriented Β-Ga2o3 Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy: Growth and Structural Characterizations

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Wet etching in beta-Ga2O3 bulk single crystals

2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality