Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Epitaxial Growth of (-201) β-Ga2O3 on (001) Diamond Substrates

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Surface zeta potential and diamond growth on gallium oxide single crystal

Orientation-Dependent Atomic-Scale Mechanism of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth

Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

(3̄10)-Oriented Β-Ga2o3 Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy: Growth and Structural Characterizations

Unraveling evolution of microstructural domains in the heteroepitaxy of β -Ga2O3 on sapphire

Offcut-related step-flow and growth rate enhancement during (100) $β$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (1 1 1) and (1 0 0) substrates by chemical vapor deposition

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy