Abstract:In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the shell growth of GaN around GaN template NWs under the boundary condition that Ga and N do not impinge on a given sidewall facet at the same time. Our experiments with different V/III ratios and substrate temperatures show that obtaining shells with homogeneous thickness along the whole NW length is not straightforward. Analyzing in detail the shell morphology with and without substrate rotation, we find that the different azimuthal angles of the sources have a major impact on the Ga adatom kinetics and the final shell morphology. On the basis of these experimental results, we develop a diffusion model which takes into account different NW facets and the substrate. The model allows to describe well the experimental shell profiles and predicts that homogeneous shell growth can be achieved if the Ga and N source are arranged next to each other or for very high rotation speeds. Moreover, the modeling reveals that the growth on a given side facet can be categorized within one rotation in four different phases: the Ga wetting phase, the metal-rich growth phase, the N-rich growth phase, and the dissociation phase. The striking difference to growth processes on planar samples is that, in our case, diffusion takes place between different regions, i.e. the sidewall vs. the top facet and substrate, out of which on one N impinges not continuously, resulting in complex gradients in chemical potential that are modulated in time by substrate rotation. The comprehensiveness of our model provides a deep understanding of diffusion processes and the resulting adatom concentration, and could be applied to other 3D structures and material systems

Strain Induced Composition Profile in InGaN/GaN Core–shell Nanowires

Simulation of self-assembled compositional core-shell structures in In x Ga 1 − x N nanowires

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

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Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

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Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

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3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Straight and Helical InGaN Core–shell Nanowires with a High in Core Content

Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Strain in Semiconductor Core-Shell Nanowires

Strain Effects on the Polarized Optical Properties of Ingan with Different in Compositions

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Elastically Frustrated Rehybridization: Origin of Chemical Order and Compositional Limits in InGaN Quantum Wells

Effect of strain on space charge layer in GaN nanowires investigated by in-situ off-axis electron holography